au.\*:("KASPER, Erich")
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Monolithic integrated mm-wave circuits on high resistivity siliconSCHÖLLHORN, Claus; KASPER, Erich.Recent research developments in microwave theory & techniques Vol. 2 - 2004. Recent research developments in microwave theory & techniques. 2004, pp 155-182, isbn 81-7895-150-9, 28 p.Book Chapter
Fifth International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)DERRIEN, Jacques; VINH LE THANH; KASPER, Erich et al.Thin solid films. 2008, Vol 517, Num 1, issn 0040-6090, 475 p.Conference Proceedings
DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTsWASHIO, Katsuyoshi.Thin solid films. 2008, Vol 517, Num 1, pp 6-9, issn 0040-6090, 4 p.Conference Paper
Photoelectric method for non-contact characterization of SiGeTSIDILKOVSKI, Edward; STEEPLES, Kenneth.Thin solid films. 2008, Vol 517, Num 1, pp 170-171, issn 0040-6090, 2 p.Conference Paper
Study of silicon/oxides interfaces by means of Si2p resonant photoemissionTALLARIDA, Massimo; SCHMEISSER, Dieter.Thin solid films. 2008, Vol 517, Num 1, pp 447-449, issn 0040-6090, 3 p.Conference Paper
Impact of emitter fabrication on the yield of SiGe HBTsHEINEMANN, B; RÜCKER, H; TILLACK, B et al.Thin solid films. 2008, Vol 517, Num 1, pp 71-74, issn 0040-6090, 4 p.Conference Paper
SO-limited mobility in a germanium inversion channel with non-ideal metal gateSHAH, Raheel; DE SOUZA, M. M.Thin solid films. 2008, Vol 517, Num 1, pp 412-415, issn 0040-6090, 4 p.Conference Paper
Selective vapor phase etching of SiGe versus Si by HClYAMAMOTO, Yuji; KÖPKE, Klaus; TILLACK, Bernd et al.Thin solid films. 2008, Vol 517, Num 1, pp 90-92, issn 0040-6090, 3 p.Conference Paper
Spintronics for nanoelectronics and nanosystemsWANG, Kang L; ZUOMING ZHAO; KHITUN, Alex et al.Thin solid films. 2008, Vol 517, Num 1, pp 184-190, issn 0040-6090, 7 p.Conference Paper
Integrated silicon schottky mixer diodes with cutoff frequencies above 1 THzMORSCHBACH, Michael; MÜLLER, Andreas; SCHÖLLHORN, Claus et al.IEEE transactions on microwave theory and techniques. 2005, Vol 53, Num 6, pp 2013-2018, issn 0018-9480, 6 p., 2Conference Paper
Anisotropy of the surface thermodynamic properties of siliconMÜLLER, P; METOIS, J. J.Thin solid films. 2008, Vol 517, Num 1, pp 65-68, issn 0040-6090, 4 p.Conference Paper
Current topics of silicon germanium devicesKASPER, Erich.Applied surface science. 2008, Vol 254, Num 19, pp 6158-6161, issn 0169-4332, 4 p.Conference Paper
Epitaxy : Away to novel field effect devicesSULIMA, Torsten; ABELEIN, Ulrich; EISELE, Ignaz et al.Thin solid films. 2008, Vol 517, Num 1, pp 365-368, issn 0040-6090, 4 p.Conference Paper
Memory properties of oxide-nitride-oxynitride stack structure using ultra-thin oxynitrided film as tunneling layer for nonvolatile memory device on glassJUNG, Sungwook; HWANG, Sunghyun; YI, J et al.Thin solid films. 2008, Vol 517, Num 1, pp 362-364, issn 0040-6090, 3 p.Conference Paper
Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealingGELLOZ, B; KOYAMA, H; KOSHID, N et al.Thin solid films. 2008, Vol 517, Num 1, pp 376-379, issn 0040-6090, 4 p.Conference Paper
Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si1-xGex/Si(100) heterostructureSEO, Takahiro; SAKURABA, Masao; MUROTA, Junichi et al.Thin solid films. 2008, Vol 517, Num 1, pp 110-112, issn 0040-6090, 3 p.Conference Paper
Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defectsVDOVIN, V. I; ZAKHAROV, N. D.Thin solid films. 2008, Vol 517, Num 1, pp 278-280, issn 0040-6090, 3 p.Conference Paper
Numerical simulations of the anisotropic elastic field of screw dislocation networks in twist boundariesMADANI, Salah; OUTTAS, Toufik; ADAMI, Lahbib et al.Thin solid films. 2008, Vol 517, Num 1, pp 262-264, issn 0040-6090, 3 p.Conference Paper
Control of electronic charged states of Si-based quantum dots for floating gate applicationMIYAZAKI, S; MAKIHARA, K; IKEDA, M et al.Thin solid films. 2008, Vol 517, Num 1, pp 41-44, issn 0040-6090, 4 p.Conference Paper
Free surface nanopaterning with burried hexagonal dislocations array. Simulation of anisotropic elastic fieldsOUTTAS, Toufik; MADANI, Salah; ADAMI, Lahbib et al.Thin solid films. 2008, Vol 517, Num 1, pp 275-277, issn 0040-6090, 3 p.Conference Paper
Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr), /high-k gate dielectric, Hf(Zr)O2, interfacesLUCOVSKY, G; WHITTEN, J. L.Thin solid films. 2008, Vol 517, Num 1, pp 343-345, issn 0040-6090, 3 p.Conference Paper
Local strain in Si/Si0.6Ge0.4/Si(100) heterostructures by stripe-shape patterningUHM, Jangwoong; SAKURABA, Masao; MUROTA, Junichi et al.Thin solid films. 2008, Vol 517, Num 1, pp 300-302, issn 0040-6090, 3 p.Conference Paper
Thermal stability improvement of Si1-yCylayers by SiO2 cap layersISHIHARA, Hanae; INOUE, Komaki; YAMADA, Akira et al.Thin solid films. 2008, Vol 517, Num 1, pp 213-215, issn 0040-6090, 3 p.Conference Paper
High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/ drain electrode formed by in-situ doped selective CVD epitaxial growthTAKEHIRO, Shinobu; SAKURABA, Masao; TSUCHIYA, Toshiaki et al.Thin solid films. 2008, Vol 517, Num 1, pp 346-349, issn 0040-6090, 4 p.Conference Paper
Low temperature epitaxial growth of Fe3Si on Si(111) substrate through ultra-thin SiO2 filmsUEDA, Koji; KUMANO, Mamoru; SADOH, Taizoh et al.Thin solid films. 2008, Vol 517, Num 1, pp 425-427, issn 0040-6090, 3 p.Conference Paper
